document number: 65459 www.vishay.com s09-2018-rev. a, 05-oct-09 1 dual n-channel 20 v (d-s) mosfet smmb912dk vishay siliconix new product features ? high quality manufacturing process using smm process flow ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-75 package - small footprint area ? 100 % r g tested ? compliant to rohs directive 2002/95/ec ? find out more about vishay?s medical products at: www.vishay.com/medical-mosfets application examples ? medical implantable applications including - drug delivery systems - defibrillators - pacemakers - hearing aids - other implantable devices ? load switch, pa switch and battery switch for portable devices ? dc/dc converter product summary v ds (v) 20 r ds(on) ( ) at v gs = 4.5 v 0.216 r ds(on) ( ) at v gs = 2.5 v 0.268 r ds(on) ( ) at v gs = 1.8 v 0.375 i d (a) a 1.5 configuration dual n -channel mosfet g 1 d 1 s 1 n -channel mosfet g 2 d 2 s 2 powerpak sc75-6l-dual s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 1.60 mm 1.60 mm d 1 d 2 markin g code x x x m b x lot tracea b ility and date code part # code ordering information package powerpak sc-75 lead (pb)-free and halogen-free SMMB912DK-T1-GE3 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c a i d 1.5 a t c = 70 c a 1.5 t a = 25 c b, c 1.5 t a = 70 c b, c 1.4 pulsed drain current i dm 5 continuous source-drain diode current t c = 25 c a i s 1.5 t a = 25 c b, c 0.9 maximum power dissipation t c = 25 c p d 3.1 w t c = 70 c 2.0 t a = 25 c b, c 1.1 t a = 70 c b, c 0.7 operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperature) c, d 260
www.vishay.com document number: 65459 2 s09-2018-rev. a, 05-oct-09 smmb912dk vishay siliconix new product notes a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-75 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 125 c/w. thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b, f t 5 s r thja 90 115 c/w junction-to-case (drain) steady state r thjc 32 40 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 - - v v ds temperature coefficient v ds /t j i d = 250 a -22- mv/c v gs(th) temperature coefficient v gs(th) /t j -- 2- gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 20 v - - 1 a v gs = 0 v v ds = 20 v, t j = 55 c - - 10 on-state drain current a i d(on) v gs = 4.5 v v ds 5 v 5 - - a drain-source on-state resistance a r ds(on) v gs = 4.5 v i d = 1.8 a - 0.180 0.216 v gs = 2.5 v i d = 1.6 a - 0.223 0.268 v gs = 1.8 v i d = 0.3 a - 0.300 0.375 forward transconductance a g fs v ds = 10 v, i d = 1.8 a - 3 - s dynamic b input capacitance c iss v gs = 0 v v ds = 10 v, f = 1 mhz -95- pf output capacitance c oss -24- reverse transfer capacitance c rss -11- total gate charge q g v gs = 8 v v ds = 10 v, i d = 1.8 a - 2 3 nc v gs = 4.5 v v ds = 10 v, i d = 1.8 a -1.21.8 gate-source charge q gs -0.3- gate-drain charge q gd -0.15- gate resistance r g f = 1 mhz 0.5 2.5 5 turn-on delay time t d(on) v dd = 10 v, r l = 7.1 i d ? 1.4 a, v gen = 4.5 v, r g = 1 -510 ns rise time t r -1020 turn-off delay time t d(off) -2436 fall time t f -816 turn-on delay time t d(on) v dd = 10 v, r l = 7.1 i d ? 1.4 a, v gen = 8 v, r g = 1 -24 rise time t r -918 turn-off delay time t d(off) -816 fall time t f -714 source-drain body diode characteristics continuous source-drain diode current c i s t c = 25 c - - 1.5 a pulse diode forward current i sm --5 body diode voltage v sd i s = 1.4 a, v gs = 0 v - 0.7 1.2 v
document number: 65459 www.vishay.com s09-2018-rev. a, 05-oct-09 3 smmb912dk vishay siliconix new product notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. package limited. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage transfer characteristics capacitance source-drain body diode characteristics body diode reverse recovery time t rr i f = 1.4 a, di/dt = 100 a/s, t j = 25 c -918ns body diode reverse recovery charge q rr -36nc reverse recovery fall time t a -6- ns reverse recovery rise time t b -3- specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit 0 1 2 3 4 5 012345 v gs =5 v thr u 2.5 v v gs =1 v v gs =1.5 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.0 0.1 0.2 0.3 0.4 0.5 012345 v gs =4.5 v v gs =1. 8v v gs =2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.0 0.2 0.4 0.6 0. 8 1.0 0.0 0.5 1.0 1.5 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 30 60 90 120 150 04 8 12 16 20 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf)
www.vishay.com document number: 65459 4 s09-2018-rev. a, 05-oct-09 smmb912dk vishay siliconix new product typical characteristics t a = 25 c, unless otherwise noted gate charge soure-drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0 2 4 6 8 0.0 0.4 0. 8 1.2 1.6 2.0 v ds =16 v i d =1. 8 a v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 0 0.3 0.6 0.9 1.2 1 0.1 10 t j =150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.35 0.45 0.55 0.65 0.75 0. 8 5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) 0.6 0.9 1.2 1.5 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v v gs =2.5 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =1. 8 a 0.0 0.1 0.2 0.3 0.4 0246 8 t j =25 c t j = 125 c i d =1. 8 a - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1
document number: 65459 www.vishay.com s09-2018-rev. a, 05-oct-09 5 smmb912dk vishay siliconix new product typical characteristics t a = 25 c, unless otherwise noted safe operating area, junction-to-ambient power derating, junction-to-case current derating* power derating, junction-to-ambient * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resist ance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. 10 0.1 0.1 1 10 1 t a = 25 c single p u lse 1ms 0.01 10 ms 100 ms 1s,10s dc b v dss limited 100 100 s limited b yr ds(on)* v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 0 1 2 3 4 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) 0 1 2 3 4 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
www.vishay.com document number: 65459 6 s09-2018-rev. a, 05-oct-09 smmb912dk vishay siliconix new product typical characteristics t a = 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65459 . 10 -3 10 -2 1000 10 1 10 -1 10 -4 100 0.2 0.1 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 100 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.05 0.02 single p u lse 10 -3 10 -2 10 -1 10 -4 1 0.2 0.1 0.05 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 1 0.1 single p u lse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
